K4B2G1646F-BYMA产品信息:
品牌:三星
型号:K4B2G1646F-BYMA
容量:2GBIT(128M x 16 )
技术:DDR3 SDARM
类别:集成电路IC
产品族:存储器
格式:闪存
Speed:1866 Mbps
Voltage:1.35 V
Temp.:0 ~ 85 °C
Package:96FBGA
Product Status:Mass Production
Samsung DDR3's enhanced bandwidth and reliabilty drives a broad range of applications such as notebooks, desktops, and industrial solutions including automotive, all at double the speed of DDR2.
Samsung's industry-first 30 nm class DRAM consumes less power, lowering the TCO with a 30% reduction in power consumption versus the previous generation.
详细描述:K4B2G1646F-BYMA IC FLASH DDR3 SDARM 存储器 2GBIT 96FBGA
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